By Topic

Effect of PECVD SiC and SiCN cap layer deposition on mesoporous silica ultra low k dielectric films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Schulz, S.E. ; Center of Microtechnologies, Chemnitz Univ. of Technol., Germany ; Schulze, K. ; Matusche, J. ; Schmidt, U.
more authors

It is crucial to apply cap layers with minimum permittivity to ensure a minimum effective k-value of the whole dielectric stack. Therefore, the influence of the deposition of PECVD SiC and SiCN cap layers with k < 5.0 on the electrical and chemical properties of low k dielectric films is the subject of this work.

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI

Date of Conference:

31 March-1 April 2003