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Parameter sensitivity of narrow-channel MOSFET's

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2 Author(s)
Li, E.H. ; Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK ; Ng, H.C.

An analytical method is used to examine the threshold voltage sensitivity due to various device parameter fluctuations in the narrow-channel MOSFETs. The analysis is based on a narrow-channel model with a semirecessed field-isolation structure and a short-channel modification. The results show that while the dopant-concentration and fixed-oxide charges fluctuation increases sensitivity, the back-gate bias fluctuation decreases sensitivity as the channel width is reduced. The present strategy is simple and is therefore ideal for miniaturized device processing simulation.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 11 )