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An analytical method is used to examine the threshold voltage sensitivity due to various device parameter fluctuations in the narrow-channel MOSFETs. The analysis is based on a narrow-channel model with a semirecessed field-isolation structure and a short-channel modification. The results show that while the dopant-concentration and fixed-oxide charges fluctuation increases sensitivity, the back-gate bias fluctuation decreases sensitivity as the channel width is reduced. The present strategy is simple and is therefore ideal for miniaturized device processing simulation.<
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
11
)
Date of Publication: Nov. 1991
- Page(s):
- 608 - 610
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4093333
- Digital Object Identifier :
- 10.1109/55.119213
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1991
- Sponsored by :
- IEEE Electron Devices Society
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