By Topic

Gate-self-aligned p-channel germanium MISFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
T. N. Jackson ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; C. M. Ransom ; J. F. DeGelormo

The authors have fabricated the first gate-self-aligned germanium MISFETs and have obtained record transconductance for germanium FETs. The devices fabricated are p-channel, inversion-mode germanium MISFETs. A germanium-oxynitride gate dielectric is used and aluminum gates, serve as the mask for self-aligned source and drain implants. A maximum room-temperature transconductance of 104 mS/mm was measured for a 0.6- mu m gate length. A hole inversion channel mobility of 640 cm/sup 2//V-s was calculated using transconductance and capacitance data from long-channel devices. This large hole channel mobility suggests that germanium may be an attractive candidate for CMOS technology.<>

Published in:

IEEE Electron Device Letters  (Volume:12 ,  Issue: 11 )