Referenced Items are not available for this document.
A p-type conducting layer has been formed in a substrate of semi-insulating natural diamond (type IIa) by boron implantation. Silicon dioxide was deposited over this layer to make an insulated-gate field-effect transistor. Saturation and pinch-off were both observed at room temperature. The transconductance was 3.9 mu S-mm/sup -1/ and the output conductance was 60 nS-mm/sup -1/. This is the first reported use of ion implantation to successfully fabricate a field-effect device in diamond.<
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
11
)
Date of Publication: Nov. 1991
- Page(s):
- 602 - 604
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4093331
- Digital Object Identifier :
- 10.1109/55.119211
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1991
- Sponsored by :
- IEEE Electron Devices Society
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