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Effect of hot-carrier injection on n- and pMOSFET gate oxide integrity

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3 Author(s)
Rosenbaum, E. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Rofan, R. ; Chenming Hu

N- and pMOSFETs with 9-nm gate oxide are compared. Injected hot holes are about 100 times as effective as electrons at 10.5 MV/cm of oxide field in causing oxide breakdown. Gate current in nMOSFETs under stress conditions is due to holes and electrons. The gate current in pMOSFETs is about 1000 times as large, but solely due to electrons. PMOSFETs can tolerate 1000 times more charge injection than nMOSFETs, but not more drain current stress.<>

Published in:

Electron Device Letters, IEEE  (Volume:12 ,  Issue: 11 )