Referenced Items are not available for this document.
N- and pMOSFETs with 9-nm gate oxide are compared. Injected hot holes are about 100 times as effective as electrons at 10.5 MV/cm of oxide field in causing oxide breakdown. Gate current in nMOSFETs under stress conditions is due to holes and electrons. The gate current in pMOSFETs is about 1000 times as large, but solely due to electrons. PMOSFETs can tolerate 1000 times more charge injection than nMOSFETs, but not more drain current stress.<
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
11
)
Date of Publication: Nov. 1991
- Page(s):
- 599 - 601
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4093330
- Digital Object Identifier :
- 10.1109/55.119210
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1991
- Sponsored by :
- IEEE Electron Devices Society
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