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Novel N/sub 2/O-oxynitridation technology for forming highly reliable EEPROM tunnel oxide films

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4 Author(s)
H. Fukuda ; Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; M. Yasuda ; T. Iwabuchi ; S. Ohno

Ultrathin ( approximately=6 nm) oxynitrided SiO/sub 2/ (SiO/sub x/N/sub y/) films have been formed on Si

Published in:

IEEE Electron Device Letters  (Volume:12 ,  Issue: 11 )