Referenced Items are not available for this document.
P-channel MOS thin-film transistors (TFTs) have been fabricated in low-pressure chemical vapor deposition (LPCVD) polycrystalline silicon-germanium (poly-SiGe) films using either a low-temperature (
Published in:
Electron Device Letters, IEEE
(Volume:12
,
Issue:
11
)
Date of Publication: Nov. 1991
- Page(s):
- 584 - 586
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4093325
- Digital Object Identifier :
- 10.1109/55.119205
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1991
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
