By Topic

A single-chip multimode receiver for GSM900, DCS1800, PCS1900, and WCDMA

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
J. Ryynanen ; Electron. Circuit Design Lab., Helsinki Univ. of Technol., Espoo, Finland ; K. Kivekas ; J. Jussila ; L. Sumanen
more authors

A single-chip, multimode receiver for GSM900, DCS1800, PCS1900, and UTRA/FDD WCDMA is introduced in this paper. The receiver operates at four different radio frequencies with two different baseband bandwidths. The presented chip uses a direct-conversion architecture and consists of a low-noise amplifier (LNA), downconversion mixers with on-chip local-oscillator I/Q generation, channel selection filters, and programmable gain amplifiers. In spite of four receive bands, only four on-chip inductors are used in the single-ended LNA. The repeatable receiver second-order input intercept point (IIP2) of over +42 dBm is achieved with mixer linearization circuitry together with a baseband circuitry having approximately +100-dBV out-of-band IIP2. The noise figure of the SiGe BiCMOS receiver is less than 4.8 dB in all GSM modes, and 3.5 dB in WCDMA. The power consumption from a 2.7-V supply in all GSM modes and in WCDMA mode is 42 and 50 mW, respectively. The silicon area is 9.8 mm2 including the bonding pads.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:38 ,  Issue: 4 )