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Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

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7 Author(s)
Vellas, N. ; Dept. Hyperfrequences et Semiconducteurs, Inst. d'Electronique et de Microelectronique du Nord, Villeneuve d'Ascq, France ; Gaquiere, C. ; Minko, A. ; Hoel, V.
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The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 × 50 × 0.5 μm2 HEMT with a linear power gain of 16 dB. These results constitute the state of the art.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:13 ,  Issue: 3 )