Referenced Items are not available for this document.
Cryogenic low-noise two-stage amplifiers were developed for frequency bands of 3.4-4.6 GHz, 4-8 GHz, and 8-9 GHz using commercial GaAs high electron mobility transistor. The performances are in very good agreement with simulations, and at a cryogenic temperature of 12 K, input noise temperatures get as low as 0.6 K/GHz (2.8 K for the 3.4-4.6 GHz LNA and 5 K for the 4-8 GHz and 8-9 GHz LNAs). Gain ranges from 25 to 28 dB. Ultralow noise temperature, low-power consumption, high reliability, and reproducibility make these devices adequate for series production and receiver arrays in, e.g., telescopes.
Published in:
Microwave and Wireless Components Letters, IEEE
(Volume:13
,
Issue:
3
)
Date of Publication: March 2003
- Page(s):
- 96 - 98
- ISSN :
- 1531-1309
- INSPEC Accession Number:
- 7558929
- Digital Object Identifier :
- 10.1109/LMWC.2003.810116
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 20 March 2003
- Issue Date :
- March 2003
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
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