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Broad-band power amplifier with an improved doubly tapered periodic bandgap PBG structure for harmonic tuning

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8 Author(s)
Man-Long Her ; Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan ; Yi-Chyun Chiou ; Yu-Zhen Wang ; Yu-Lin Wang
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We have designed and implemented three class A GaAs field-effect transistor (FET) power amplifiers. Two of these three cases have a 50 Ω microstrip line utilizing an improved doubly tapered and a singly tapered periodic bandgap (PBG) structure for harmonic tuning respectively, while the other has only a 50 Ω straight line. The doubly tapered PBG structure has more significantly improvement in output power and power added efficiency (PAE) than a singly tapered case and also has the ability to terminate the second and third harmonics. Measurement shows the improvement of output power and PAE with 0.5 dB and 4 % respectively by using a doubly PBG structure compared with a singly tapered one, and with 0.8 dB and 7 % improvement without utilizing a PBG structure.

Published in:

Communication Systems, 2002. ICCS 2002. The 8th International Conference on  (Volume:1 )

Date of Conference:

25-28 Nov. 2002