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SiSMA: a statistical simulator for mismatch analysis of MOS ICs

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6 Author(s)
G. Biagetti ; Dipt. di Elettronica e Autom., Ancona Univ., Italy ; S. Orcioni ; L. Signoracci ; C. Turchetti
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This paper presents a simulator for the statistical analysis of MOS integrated circuits affected by mismatch effect. The tool is based on a rigorous formulation of circuit equations including random current sources to take into account technological tolerances. The simulator requires a simulation time of several orders of magnitude lower than that required by Monte Carlo analysis, while ensuring a good accuracy.

Published in:

Computer Aided Design, 2002. ICCAD 2002. IEEE/ACM International Conference on

Date of Conference:

10-14 Nov. 2002