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A 1-W 2-6GHz amplifier utilizing a discretely packaged GaAs FET

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1 Author(s)
Wade, P. ; Microwave Semiconductor Corp., Somerset, NJ, USA

A 100% bandwidth GaAs FET power amplifier utilizing a discretely packaged GaAs FET will be presented. The design of the package - hermetic stripline - the microstrip circuit, microwave performance characteristics and high-power impedances will be covered.

Published in:

Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International  (Volume:XXI )

Date of Conference:

15-17 Feb. 1978