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Large high density CID imagers

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3 Author(s)
Brown, D. ; General Electric Research/Development Center, Schenectady, NY, USA ; Ghezzo, M. ; Sargent, P.

This paper will discuss the fabrication and performance of large (16K, 60K and 78K cells), high density CID self-scanned imager arrays. Small (1.2 × 1.2 mils) overlapping electrode cells using first level polysilicon electrode lines and second level polysilicon or antimony tin oxide electrode lines were utilized.

Published in:

Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International  (Volume:XXI )

Date of Conference:

15-17 Feb. 1978