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A monolithic integrated 4-GHz amplifier

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1 Author(s)
Van Tuyl, R. ; Hewlett-Packard Laboratories, Santa Rosa, CA, USA

Monolithic GaAs MESFET integrated voltage amplifier stages with 7dB gain from dc to 4GHz, and 12dB gain from dc to 2.5GHz will be reported. A three-stage amplifier with variable frequency peaking shows a maximum of 28dB gain at 2GHz.

Published in:
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International  (Volume:XXI )

Date of Conference: 15-17 Feb. 1978

Page(s):
72 - 73
Conference Location :
San Francisco, CA, USA
Digital Object Identifier :
10.1109/ISSCC.1978.1155782
Product Type:
Conference Publications

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