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A four-device bipolar memory cell

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1 Author(s)
Heald, R. ; Signetics Corp., Sunnyvale, CA, USA

A static I2L memory cell using four transistors in a single isolated region will be described. Sharing of access lines permits operation with six contacts per cell yielding a cell size near 1 square mil.

Published in:
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International  (Volume:XXI )

Date of Conference: 15-17 Feb. 1978

Page(s):
102 - 103
Conference Location :
San Francisco, CA, USA
Digital Object Identifier :
10.1109/ISSCC.1978.1155752
Product Type:
Conference Publications

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