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A 4K static bipolar TTL RAM

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4 Author(s)
Okada, K. ; Nippon Electric Co., Kawasaki, Japan ; Aomura, K. ; Nokubo, J. ; Shiba, H.

This paper will describe a 40ns, 50mW, 4K static bipolar RAM that uses the polysilicon self-aligned method in combination with non-epi technology (diffused collector) and a local oxidation process to improve performance.

Published in:

Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International  (Volume:XXI )

Date of Conference:

15-17 Feb. 1978