By Topic

RF 4H-SiC bipolar junction transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
I. Perez-Wurfl ; Colorado Univ., Boulder, CO, USA ; A. Konstantinov ; J. Torviko ; B. Van Zeghbroeck

We report on the progress towards a silicon carbide (SiC) bipolar transistor aimed at operation at RF frequencies up to 3 GHz. Devices with a 5 μm emitter stripe width were fabricated and tested on-chip with cascade probes and an HP8510C network analyzer. These devices have an ft/fmax of 0.6/0.2GHz. To best of our knowledge the devices represent a first demonstration of an RF 4H-SiC BJT.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002