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Compact circuit model of GaN HFETs for mixed signal circuits

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6 Author(s)
A. Conway ; California Univ., San Diego, La Jolla, CA, USA ; P. Asbeck ; J. Jensen ; W. S. Wong
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This work presents a comprehensive compact circuit model of GaN HFETs for mixed signal applications. Self-heating and trapping effects are included in the model. Model parameters can be determined by fitting measured data, or estimated analytically based on geometrical dimensions and layer structure. Good agreement has been found with measured characteristics from DC to RF.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002