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During the past decade, semiconductor junction electroluminescence has evolved from a laboratory phenomenon to a manufacturing technology. This success can be attributed to the extensive research in the preparation and characterization of III-V compounds. Materials emitting radiation in various regions of the visible spectrum are now available. The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.