Variation of Resistivity with Temperature for Thin Bismuth Films on BeO Substrates

The variation of resistivity with temperature for thin polycrystalline films of bismuth on BeO substrates is reported. Resistivity minima at temperatures of 90-150°C were observed for films of thickness 0.08-1.0 microns. Experimental results are compared with the theory relating the decrease of the mean free path by grain boundary scattering to the decrease in sample size.