Referenced Items are not available for this document.
A solution for the transient response of a reverse biased semiconductor diode to a step function (voltage) may be found by considering the junction essentially a voltage variable capacitance. The assumptions from which the analysis is made are given and found to be applicable in a wide variety of cases. Specific solutions are obtained for abrupt and linearly graded junctions, and experimental evidence is presented which is in good agreement with the derived equations.
Published in:
Component Parts, IRE Transactions on
(Volume:7
,
Issue:
2
)
Date of Publication: Jun 1960
- Page(s):
- 49 - 53
- ISSN :
- 0096-2422
- Digital Object Identifier :
- 10.1109/TCP.1960.1136446
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 January 2003
- Issue Date :
- Jun 1960
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