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A GaP MESFET for High Temperature Applications

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3 Author(s)
Weichold, M.H. ; Texas A&M University, College Station, TX, USA ; Eknoyan, O. ; Yung-Chung Kao

A process for fabricating GaP metal semiconductor field effect transistors (MESFET's) capable of operating at temperatures of up to 295°C has been developed. The characteristics of the fabricated devices suggest a need for tighter control and further research involving channel doping and thickness uniformity as well as drain and source durability.

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:5 ,  Issue: 4 )