By Topic

A New Failure Mechanism: Al-Si Bond Pad Whisker Growth During Life Test

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Turner, T. ; United Technologies/MOSTEK, Carrollton, TX, USA ; Parsons, R.

The results are presented of a study conducted to determine reasons for and kinetics of the growth of thin aluminum whiskers from the bond pads of semiconductors. These whiskers were found to grow to lengths of up to 200 µm from thin-film aluminumsilicon on N-type silicon gate metal-oxide semiconductors (NMOS). Whisker growth was found to be due to the compressive stress generated in the metal during wire bonding. The problem is complicated by the presence of silicon grains in the Al-Si film and was found only on parts using gold ball bonds. The growth rate is temperature dependent with a thermal activation energy of 0.7 eV. Copper doping of the metallization as well as the use of aluminum ultrasonically bonded wires were both found to effectively prevent whisker growth.

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:5 ,  Issue: 4 )