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Fabrication of Through-Wafer Via Conductors in Si by Laser Photochemical Processing

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4 Author(s)
Ehrlich, D. ; MIT, Lexington, MA, USA ; Silversmith, D. ; Mountain, R. ; Tsao, J.

A procedure for the fabrication of high-aspect-ratio through-wafer via conductors in Si is described. The technique is based on a rapid highly anistropic laser etching process followed by a two-step metallization. The surface area occupied by the via on the front, circuit side of the wafer, can be as small as 5 µm x 5 µm.

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Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:5 ,  Issue: 4 )