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Fringing Field Effect in MOS Devices

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4 Author(s)
Pattanayak, D.N. ; Rockwell International, Anaheim, CA, USA ; Poksheva, John G. ; Downing, R. ; Akers, L.A.

Fringing field action in metal-oxide-semiconductor (MOS) devices is discussed theoretically. Line capacitance coefficients on silicon-on-sapphire (SOS) and bulk configurations are determined from a three-dimensional model. Increase of threshold voltage of narrow-width devices due to fringing is described.

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:5 ,  Issue: 1 )

Date of Publication:

Mar 1982

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