By Topic

Forming Feedthroughs in Laser-Drilled Holes in Semiconductor Wafers by Double-Sided Sputtering

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
T. Anthony ; GE Corporate Research and Development, Schenectady, NY, USA

Electrical feedthroughs in semiconductor wafers were made by laser drilling an array of holes in a wafer and subsequently depositing a conductor on the walls of the holes by double-sided sputtering and through-hole electroplating. A maximum depth-to-diameter ratio of six for feedthrough holes through semiconductor wafers successfully implanted with a conductor by this method was determined from both experiments and theory. Two factors dictated this limit. First, the sputtered film thickness shows a very sharp decrease with distance down the hole. Second, the critical film thickness required for film coalescence and electrical continuity increases with distance down the hole because the incidence angle of sputtered material becomes more oblique with distance down the hole and increases the tendency of the film to grow as separate islands.

Published in:

IEEE Transactions on Components, Hybrids, and Manufacturing Technology  (Volume:5 ,  Issue: 1 )