By Topic

A Study of the Reliability of Microwave Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
LaCombe, D.J. ; General Electric Company,Sycracuse, NY ; Naster, R. ; Carroll, J.

A series of RF operating life tests has been performed on microwave transistors with different metallization systems to evaluate failure mechanisms and compare the lifetimes expected from the devices. An initial series of high temperature CW tests indicated that aluminum metallized devices fail after 2000h at 225°C, primarily due to voids in the emitter fingers caused by electromigration. Gold metallized transistors were found to be capable of long life at very high temperatures (2000 h at 340°C). A series of long-term pulsed life tests was performed at near operational temperatures on the same devices. The results confirmed the lifetime prediction for the aluminum devices based on the CW tests, but the failure mechanisms were somewhat different. The devices failed due to an emitter-base shunting mechanism, another manifestation of electromigration. The refractory metal/gold metallized devices failed because of metal peeling, a process related problem.

Published in:

Parts, Hybrids, and Packaging, IEEE Transactions on  (Volume:13 ,  Issue: 4 )