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Electron-Beam-Induced Currents in Simple Device Structures

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3 Author(s)
K. Galloway ; National Bureau of Standards,Washington,DC ; K. Leedy ; W. Keery

Electron-beam-induced current (EBIC) in semiconductor devices produced by the electron beam of a scanning electron microscope (SEM) can be used to image sub-surface device features and to measure certain material parameters, This paper presents a simple method of calculation for estimating the magnitude of EBIC signals. EBIC signals from silicon p-n junction diodes are compared with the results of the calculation, The application of EBIC to more complicated device structures is discussed.

Published in:

IEEE Transactions on Parts, Hybrids, and Packaging  (Volume:12 ,  Issue: 3 )