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The use of Ag-W-CdO and AgSi3N4as Contact Materials

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3 Author(s)
Slade, P.G. ; Westinghouse Research Lab.,Pittsburgh ; Andersson, C. ; Kossowsky, Ram

Three different contact combinations were investigated: (a) Ag-W operated against Ag-CdO, (b) Ag-W-CdO contact pair, (c) Ag-Si3N4contact pair. A hot pressing technique was used to make the contacts for (b) and (c). The contacts were tested by switching a 20 A, 110V circuit and then examined using a Scanning Electron Microscope. It was found that: (a) The Ag-W vs Ag-CdO produced a high resistance contact pair which was the result of migration of a W layer onto the Ag-CdO contact. (b) The high temperature arc roots caused the W to reduce the CdO in the Ag-W-CdO contact material, which led to severe contact erosion and degradation. (c) The Si3N4dissociated in the switching arc and the Si formed a SiO2layer on the contact surface, which would eventually lead to a high contact resistance. These results are discussed in terms of the thermodynamics of the material combinations and their interaction with the switching arc.

Published in:

Parts, Hybrids, and Packaging, IEEE Transactions on  (Volume:12 ,  Issue: 1 )

Date of Publication:

Mar 1976

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