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Long Term Stability of DROs Compared to Crystal Oscillators

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1 Author(s)

Guidelines are presented for GaAs FET DRO's which when followed result in the DRO's long term drift characteristics being similar to crystal oscillators. The guidelines fall into three categories: electrical stresses in the FET, fabrication issues of the DRO, and processing of the FET (a screening test for the GaAs FETs is described). Experimental data is included on a sample of units that support the proposed guidelines.

Published in:

Microwave Symposium Digest, 1987 IEEE MTT-S International  (Volume:2 )

Date of Conference:

May 9 1975-June 11 1987

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