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A new method for large-signal transistor analysis is presented and applied to TEGFETs and MESFETS. Saturation mechanisms of both types of transistors are described and operation differences are discussed. The importance and influence of higher harmonic signal components on the large signal characteristics is also shown.
Microwave Symposium Digest, 1987 IEEE MTT-S International (Volume:2 )
Date of Conference: May 9 1975-June 11 1987