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An interdigitated gate electrode field effect transistor (IGEFET) for epoxy cure monitoring

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2 Author(s)
Wiseman, J.M. ; US Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA ; Kolesar, Edward S.

An interdigitated gate electrode field effect transistor (IGEFET) has been fabricated and utilized to monitor the cure of a common epoxy. The IGEFET sensor consists of an interdigitated gate electrode structure coupled to the gate of a conventional MOSFET. The epoxy was deposited on the interdigitated gate electrode, and the IGEFET's electrical performance was observed as the epoxy cured. The cross-linked chemical reaction during epoxy cure caused impedance perturbations that were quantified when the IGEFET was excited with a voltage pulse. Charge transferred through the chemically active epoxy is manifested as a time-dependent potential applied to the MOSFET gate contact. By operating the MOSFET as a linear amplifier, a potential corresponding to the time-dependent gate voltage was directly measured at the amplifier output. The Fourier transform of the IGEFET's time-domain response at specific time increments was computed. The resulting epoxy cure spectra were compared to a common baseline formed by computing the difference spectra involving the IGEFET's pulse excitation signal and the signal corresponding to the epoxy's chemical state at a specific instant of time

Published in:

Aerospace and Electronics Conference, 1990. NAECON 1990., Proceedings of the IEEE 1990 National

Date of Conference:

21-25 May 1990