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Modeling p-types dopants in gallium arsenide with SUPREM 3.5

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3 Author(s)
M. D. Deal ; Integrated Circuits Lab., Stanford Univ., CA, USA ; S. E. Hansen ; H. G. Robinson

A computer simulation program has been developed which simulates the processes used to fabricate ion-implanted GaAs integrated circuits. This 1-D simulator, named SUPREM 3.5, predicts the structure and doping profiles of the channel and source/drain regions of GaAs MESFETs and JFETs using recently developed models and recently determined parameters for ion implantation, diffusion, and activation. The simulator can model not only the common n-type dopants, but also the p-type dopants (e.g. Be and Mg) used in JFET and buried p-layer structures SUPREM 3.5 can be used to determine the optimal process conditions for the different structures and dopants, and also to assist in determining which dopant to use.<>

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Date of Conference:

6-9 Nov. 1988