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Correction to "Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs"

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4 Author(s)
Tung, C.H. ; Nanyang Technological University ; Pey, K.L. ; Lin, W.H. ; Radhakrishnan, M.K.

In the above-named work the Fig 1 caption was incorrect. The figure is presented with a corrected caption.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 11 )