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Temperature dependence of hot-carrier degradation in silicon-on-insulator dynamic threshold voltage MOS transistors

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5 Author(s)
Jae-Ki Lee ; Dept. of Electron. Commun. Eng., Gachongil Coll., Incheon, South Korea ; Nag-Jong Choi ; Chong-Gun Yu ; Colinge, J.
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The authors analyze the influence of temperature on hot-carrier degradation of silicon-on-insulator (SOI) dynamic threshold voltage MOS (DTMOS) devices. Both low and high stress gate voltages are used. The temperature dependence of the hot-carrier effects in DTMOS devices is compared with those in SOI partially depleted (PD) MOSFETs. Possible physical mechanisms to explain the obtained results are suggested. This work shows that even if the stress gate voltage is low, the degradation of DTMOS devices stressed at high temperature could be significant.

Published in:

Electron Device Letters, IEEE  (Volume:23 ,  Issue: 11 )

Date of Publication:

Nov. 2002

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