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The ballistic MOSFET characteristics are compared in detail with those of the experimental 70-nm device at low temperatures reported by Sai-Halasz et al. (1987). The saturated region characteristics for V/sub G//spl les/0.8 V show good agreement and a proper consideration of higher subbands significantly improves agreement for V/sub G//spl ges/1.0 V. The discrepancy is large in the linear region due to carrier scattering. The carrier backscattering mechanism and the bias effect are discussed.