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Electrical and reliability properties of PZT thin films for ULSI DRAM applications

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7 Author(s)
J. Carrano ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; C. Sudhama ; V. Chikarmane ; J. Lee
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The electrical and reliability characteristics of ferroelectric capacitors fabricated using sol-gel derived 50/50 lead-zirconate-titanate (PZT) thin films have been examined for ULSI DRAM (dynamic random access memory) applications. Various electrode materials, film thicknesses (200 nm to 600 nm) and capacitor areas were used. A large stored-energy density (Q/sub c/) of 15 mu C/cm/sup 2/ (at 125 kV/cm) was measured using different methods. The results indicate that PZT thin films exhibit material properties which might satisfy the requirements of ULSI DRAMs.<>

Published in:

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control  (Volume:38 ,  Issue: 6 )