By Topic

Analysis of I-V measurements on Pt/Au-GaN Schottky contacts in a wide temperature range

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Donoval, D. ; Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia ; Kulikov, V. ; Beno, P. ; Racko, J.

The formerly derived modified method of evaluation of the Schottky barrier height applied on Pt/Au-GaN Schottky structures is presented. It is based on the measurement of I-V characteristics in a wide temperature range. By subtraction of generation-recombination, tunnelling and leakage currents from the total current, the "pure" thermionic emission current Ite and subsequently Schottky barrier height φb can be evaluated with higher physical relevance. The advantage of the mentioned method is that it allows evaluation of φb from the measured I-V characteristics which significantly deviate from the ideal thermionic-emission characteristics represented in semi-logarithmic coordinates by a straight line. The determination of the Schottky barrier ob on GaN and related compound semiconductors with higher precision is important for further analysis of new combinations of metals and semiconductors and better understanding of the physical behaviour at the interface.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002