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In this work the performance of AlGaN/GaN HEMTs on silicon substrates is presented. Prepared devices exhibit a saturation current of 0.91 A/mm and sustain significantly higher DC power in comparison to devices on sapphire. Markedly lower reduction of IDSs and gm,ext with increased temperature due to better thermal conductivity of silicon is shown. A unity gain cutoff frequency fT of 32 and 20 GHz and a maximum frequency of oscillation of 27 and 22 GHz are obtained for devices with gate lengths of 0.7 and 0.5 μm, respectively. These are the highest values reported so far on AlGaN/GaN/Si HEMTs. Presented values are comparable to those known for devices on sapphire and SiC substrates.
Date of Conference: 14-16 Oct. 2002