By Topic

ZrO2 and ZrO2/Y2O3 gate dielectrics prepared by evaporation and annealing processes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Johansson, M. ; Solid State Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden ; Yousif, M.Y.A. ; Sareen, A. ; Lundgren, P.
more authors

The electrical characteristics of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evaporation of Zr or Yttrium Stabilized Zirconia (YSZ) and subsequent thermal treatment are reported. With this method dielectrics corresponding to an equivalent oxide thickness (EOT) of 1.9 nm and a relative dielectric constant of approximately 15 have been prepared. The effect of annealing on Zr incorporation into the Si substrate is investigated SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion from the dielectric layer occur only at 1100°C.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002