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An analytical heterojunction diode model including the electron transport inside the depletion layer and the breakdown

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1 Author(s)
Horak, M. ; Dept. of Microelectron., Brno Univ. of Technol., Czech Republic

An analytical model that describes the Np+-heterojunction diode forward and reverse current is presented. The following physical processes at the heterojunction are considered: drift and diffusion with field dependent mobility, recombination, band-to-band tunneling, avalanche multiplication, thermionic-field emission. The resulting formula describes the diode current in the whole extent from forward bias through reverse bias up to breakdown.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002

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