An analytical heterojunction diode model including the electron transport inside the depletion layer and the breakdown

An analytical model that describes the Np/sup +/-heterojunction diode forward and reverse current is presented. The following physical processes at the heterojunction are considered: drift and diffusion with field dependent mobility, recombination, band-to-band tunneling, avalanche multiplication, thermionic-field emission. The resulting formula describes the diode current in the whole extent from forward bias through reverse bias up to breakdown.