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Chemical beveling of Si/SiGe structures for structure and material analysis by Raman spectroscopy

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9 Author(s)
Srnanck, R. ; Dept. of Microelectron., Slovak Acad. of Sci., Bratislava, Slovakia ; Kinder, R. ; Donoval, D. ; Peternai, L.
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Bevels through Si/SiGe structures were prepared by chemical etching. The surface of the bevels was smooth and bevel angles were in the range 10-4 rad. From the Raman spectra along the bevels the thickness and composition of SiGe alloys were determined and compared with photocurrent response spectrum of the structures.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002

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