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Strain and composition in thin SiGe buffer layers with high Ge content studied by micro-Raman spectroscopy

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6 Author(s)
Perova, T.S. ; Dept. of Electron. & Electr. Eng., Dublin Univ., Ireland ; Lyutovich, K. ; Potapova, D. ; Parry, C.P.
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Virtual substrates with high Ge content x of 0.25

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002