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Characterization of delta-doped GaAs grown by MOVPE

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6 Author(s)
Gurnik, P. ; Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia ; Beno, P. ; Srnanek, R. ; Tlaczala, M.
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The resolution of the capacitance-voltage (C-V) technique on single- and double-delta (δ)-doped GaAs is shown to be given by the breadth of dopant distribution. The experimental C-V profiles demonstrate that impurities are spatially localized on the length scale of the lattice constant. The sharp distribution of dopants is assessed by the secondary-ion mass spectroscopy.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002