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Investigation of 4H-SiC diode with RuO2 Schottky contact by DLTS

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5 Author(s)
Stuchlikova, L.' ; Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia ; Harmatha, L. ; Buc, D. ; Helmersson, U.
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Deep level transient spectroscopy measurements were performed on silicon carbide (4H-SiC) Schottky diodes with RuO2 Schottky contacts in order to investigate electrical properties of a new type of Schottky diode. Two electron deep energy levels were detected on this Schottky diode. Their thermal activation energies are 0.56 eV and 0.85 eV, respectively, referred to the conductance band. The origin of these deep levels is still under investigation.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002