By Topic

Photoluminescence characterisation of bismuth-doped GaSb

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Kucera, M. ; Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia ; Novak, J.

The paper reports on a photoluminescence (PL) characterisation of bismuth-doped gallium antimonide prepared by a travelling heater method (THM) with a Bi-zone. Detailed PL inspection of samples was done, including probing of various surface regions and PL temperature and pump intensity dependencies. In the material grown at 650°C significant shifts of PL peaks and the band-gap narrowing (BGN) were proved by spectral characterisation methods, and caused most likely by tension inside the sample. Material grown at 420°C exhibited very non-uniform luminescent properties. A part of the crystal near the crystal/seed interface showed almost pure excitonic spectra and a strong reduction of the GaSb native acceptor (NA). In regions distant from the interface PL features characteristic for a highly doped and compensated semiconductor were inspected.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002