By Topic

Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
F. Dubecky ; Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia ; B. Zat'ko ; V. Necas ; M. Sekacova
more authors

In the work, evidence and role of minority carrier extraction at the high defect concentration interface metal-semi-insulating (SI) GaAs is presented. Improvement of performance of radiation detector based on SI GaAs if extraction system is used as quasi-ohmic "back" electrode is demonstrated.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002