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Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs

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9 Author(s)
Dubecky, F. ; Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia ; Zat'ko, B. ; Necas, V. ; Sekacova, M.
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In the work, evidence and role of minority carrier extraction at the high defect concentration interface metal-semi-insulating (SI) GaAs is presented. Improvement of performance of radiation detector based on SI GaAs if extraction system is used as quasi-ohmic "back" electrode is demonstrated.

Published in:
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference: 14-16 Oct. 2002

Page(s):
145 - 148
Print ISBN:
0-7803-7276-X
INSPEC Accession Number:
7677505
Digital Object Identifier :
10.1109/ASDAM.2002.1088495
Product Type:
Conference Publications

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