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Raman spectroscopy of SixGe1-x compositional and temperature dependence

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2 Author(s)
Lorenc, M. ; TEROSIL, a.s., Roznov Pod Radhostem, Czech Republic ; Sik, J.

Raman spectroscopy is employed to study the compositional and temperature dependence of optical phonon modes in SixGe1-x(0.0037≤.×≤1) alloy. Czochralski grown samples are doped in the range from nominally undoped to heavily boron doped, with the highest concentration of free holes of 1020 cm-3. Three observed bands can be attributed to local Si-Si, Ge-Ge and Si-Ge vibrational modes. We present compositional dependence and temperature shift of the Si-Si band.

Published in:
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference: 14-16 Oct. 2002

Page(s):
103 - 106
Print ISBN:
0-7803-7276-X
INSPEC Accession Number:
7677496
Digital Object Identifier :
10.1109/ASDAM.2002.1088486
Product Type:
Conference Publications

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