By Topic

Thermal resistance of the semiconductor structures for a photomixing device

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
J. Darmo ; Max-Planck-Inst. fur Radioastronomie, Bonn, Germany ; F. Schafer ; A. Forster ; P. Kordos
more authors

The thermal resistance of layered semiconductor systems intended to be used for GaAs-based photomixing devices is studied. Layered systems with nonstoichiometric GaAs on the substrate exhibit an increase of thermal resistance of about 33%, while using a thin AlAs/GaAs multilayer structure leads to a thermal resistance only 10% larger than the thermal resistance of the GaAs substrate. The results are discussed with respect to the heat dissipation and implications for the photomixer device.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002